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参数资料
| 型号： | MRF18060BS |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS场效应管) |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 465A-06, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 198K |
| 代理商： | MRF18060BS |
5
MRF18060B MRF18060BS
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
IRL
Pin = 6 W
Figure 5. Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS)
8
10
Figure 6. Output Power versus Supply Voltage
0
VDD, SUPPLY VOLTAGE (VOLTS)
100
10
40
G
18
1
o
Figure 7. Output Power versus Frequency
90
f, FREQUENCY (MHz)
0
Figure 8. Output Power and Efficiency
versus Input Power
Pin, INPUT POWER (WATTS)
20
1800
10
0
15
1
90
20
30
30
20
1900
60
100
30
22
50
40
10
η
,
30
0
2
50
70
1820
Figure 9. Wideband Gain and IRL
(at Small Signal)
15.0
f, FREQUENCY (MHz)
10.0
1700
10.5
12.0
12.5
2100
14.5
14.0
1900
1800
2000
10
9
13
16
14
500 mA
300 mA
100 mA
IDQ = 750 mA
26
1840
3
4
5
6
60
50
40
20
15
VDD = 26 Vdc
f = 1880 MHz
11
12
28
20
24
80
90
,
2.5 W
Pin = 5 W
VDD = 26 Vdc
IDQ = 500 mA
1 W
o
,
1860
1880
60
80
70
VDD = 26 Vdc
IDQ = 500 mA
1 W
0.5 W
3 W
50
40
60
70
80
o
,
25
30
Pout
VDD = 26 Vdc
IDQ = 500 mA
f = 1880 MHz
13.5
13.0
G
0
–10
–12
–18
–20
–16
–14
–2
–4
–6
–8
VDD = 26 Vdc
IDQ = 500 mA
Gps
35
45
55
11.0
11.5
I
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF18060BSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18060BST | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF18085A | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18085ALR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18085ALSR3 | 功能描述:射频MOSFET电源晶体管 RF POWER LDMOS NI-780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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