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| 型号： | MRF18085ALSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 737K |
| 描述： | IC MOSFET RF N-CHAN NI-780S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.88GHz |
| 增益： | 15dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 800mA |
| 功率 - 输出： | 90W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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MRF18085ALR3 MRF18085ALSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier
amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and
WLL applications. Specified for GSM--GSM EDGE 1805--1880 MHz.
?
GSM and GSM EDGE Performance, Full Frequency Band
(1805--1880 MHz)
Power Gain -- 15 dB (Typ) @ 85 Watts CW
Efficiency -- 52% (Typ) @ 85 Watts CW
?
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW
Output Power
Features
?
Internally Matched for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″
Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
273
1.56
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
RθJC
0.79
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF18085A
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
MRF18085ALR3
MRF18085ALSR3
1805--1880 MHz, 85 W, 26 V
GSM/GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF18085ALR3
CASE 465A--06, STYLE 1
NI--780S
MRF18085ALSR3
?
Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
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| MRF18085ALSR5 | 功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18085AR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18085AR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18085B | 制造商:Motorola Inc 功能描述: |
| MRF18085BLR3 | 功能描述:MOSFET N-CHAN 85W 26V NI-78O RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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