参数资料
型号: MRF183SR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 360C-05, 3 PIN
文件页数: 5/12页
文件大小: 374K
代理商: MRF183SR1
LIFETIME
BUY
LAST
ORDER
31JUL04
LAST
SHIP
31JAN05
MRF183R1 MRF183SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 mAdc)
BVDSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
1
Adc
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mAdc)
VGS(Q)
3
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
0.7
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 5 Adc)
gfs
2
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
82
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
38
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
4.5
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
(VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 945.0, f2 = 945.1 MHz, IDQ = 250 mA)
Two–Tone Common Source Amplifier Power Gain
Gps
11.5
13.5
dB
Two–Tone Drain Efficiency
η
33
38
%
3rd Order Intermodulation Distortion
IMD
–32
–28
dBc
Input Return Loss
IRL
9
14
dB
(VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 930.0, f2 = 930.1 MHz, and f1 = 960.0, f2 = 960.1 MHz, IDQ = 250 mA)
Two–Tone Common Source Amplifier Power Gain
Gps
13
dB
Two–Tone Drain Efficiency
η
35
%
3rd Order Intermodulation Distortion
IMD
–32
dBc
Input Return Loss
IRL
12
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 45 Watts CW, IDQ = 250 mA,
f = 945 MHz, VSWR 5:1 at All Phase Angles)
Ψ
No Degradation in Output Power
Before and After Test
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