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参数资料
| 型号： | MRF184S |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 360C-03, 2 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 194K |
| 代理商： | MRF184S |
3
MRF184 MRF184S
MOTOROLA RF DEVICE DATA
P
Pout, OUTPUT POWER (WATTS)
I
Pout, OUTPUT POWER (WATTS PEP)
–15
– 45
– 55
0.1
1
10
100
– 20
0
20
30
40
60
Pout, OUTPUT POWER (WATTS PEP)
I
TYPICAL CHARACTERISTICS
Figure 2. Intermodulation Distortion versus
Output Power
Figure 3. Intermodulation Distortion versus
Output Power
– 30
– 40
– 50
– 60
– 80
5th
7th
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 400 mA
IDQ = 100 mA
250 mA
400 mA
18
14
12
1
10
100
G
Figure 4. Power Gain versus Output Power
80
50
20
0
0
1
2
3
Pin, INPUT POWER (WATTS)
P
Figure 5. Output Power versus Input Power
VDS = 28 Vdc
IDQ = 400 mA
f = 945 MHz
100
12
16
20
32
VDD, SUPPLY VOLTAGE (VOLTS)
P
Figure 6. Output Power versus Supply Voltage
80
40
0
80
0
0.5
1
VGS, GATE–SOURCE VOLTAGE (VOLTS)
5
Figure 7. Output Power versus Gate Voltage
60
40
0
20
2
3.5
Gpe
Pout
TYPICAL DEVICE SHOWN
3rd ORDER
–70
10
50
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
600 mA
– 35
– 25
400 mA
250 mA
VDD = 28 Vdc
f = 945 MHz
100 mA
16
G
70
40
10
30
60
0.5
1.5
2.5
16
14
15
IDQ = 400 mA
f = 945 MHz
1.0 W
2.0 W
Pin = 4.0 W
VDS = 28 Vdc
Pin = 2.0 W
f = 945 MHz
14
18
28
24
30
22
26
60
20
70
50
2.5
3
4
4.5
1.5
IDQ = 600 mA
70
70
30
90
50
10
30
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF184SR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF185 | 制造商:ASI 制造商全称:ASI 功能描述:RF POWER MOSFET |
| MRF185_02 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
| MRF187 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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