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参数资料
| 型号： | MRF186 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF MOSFET(射频MOS场效应管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-860, CASE 375B-04, 5 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 168K |
| 代理商： | MRF186 |
Product Is Not Recommended for New Design.
The next generation of higher performance products are in development. Visit our online
Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates.
1
MRF186
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequencies
from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common source amplifier applications in
28 volt base station equipment.
Guaranteed Performance @ 960 MHz, 28 Volts
Output Power — 120 Watts (PEP)
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at all Phase Angles with
5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW
MAXIMUM RATINGS
(2)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
PD
65
Vdc
Drain–Gate Voltage (RGS = 1 M
)
Gate–Source Voltage
65
Vdc
±
20
Vdc
Drain Current — Continuous
14
Adc
Total Device Dissipation @ TC = 70
°
C
Derate above 70
°
C
162.5
1.25
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
(2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.8
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF186/D
SEMICONDUCTOR TECHNICAL DATA
120 W, 1.0 GHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B–02, STYLE 2
REV 3
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