参数资料
型号: MRF186
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF MOSFET(射频MOS场效应管)
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-860, CASE 375B-04, 5 PIN
文件页数: 4/8页
文件大小: 168K
代理商: MRF186
MRF186
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 2. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
–60
–70
50
Figure 3. Intermodulation Distortion
versus Output Power
–60
10
Pout, OUTPUT POWER (WATTS) PEP
–25
–50
25
125
–35
0.1
0
Figure 4. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
11
Figure 5. Output Power versus Input Power
Pin, INPUT POWER (WATTS)
Figure 6. Output Power versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
32
16
1
0
60
140
–20
13
14
–50
5
40
75
100
1
100
100
24
12
0
150
3
8
–40
–30
–40
–30
16
12
15
0
140
80
20
60
100
120
100
Figure 7. Output Power versus Gate Voltage
VGS, GATE–SOURCE VOLTAGE (VOLTS)
5
1
80
140
3
0
40
20
120
–55
–45
10
P
2
4
TYPICAL DEVICE SHOWN
12.4
13.6
13.2
12.6
13.8
13.4
12.8
13
I
3rd Order
5th Order
7th Order
I
VDD = 28 V
f1 = 960.0 MHz
f2 = 960.1 MHz
IDQ = 800 mA
VDD = 28 V
f1 = 960.0 MHz
f2 = 960.1 MHz
IDQ = 200 mA
400 mA
1200 mA
800 mA
Gp
IDQ = 1200 mA
400 mA
800 mA
200 mA
VDD = 28 V
f = 960 MHz
Gp
η
,
o
40
1
7
4
2
6
Gps
Pout
DRAIN EFFICIENCY
VDS = 28 V
f = 960 MHz
IDQ = 800 mA
P
120
80
20
20
28
14
18
26
22
30
f = 960 MHz
IDQ = 800 mA
Pin = 5.5 W
2 W
1 W
P
60
100
1.5
3.5
0.5
2.5
4.5
Pin = 5.5 W
f = 960 MHz
IDQ = 800 mA
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