参数资料
型号: MRF19060SR3
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF POWER FIELD EFFECT TRANSISTORS
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-780S, CASE 465A-06, 2 PIN
文件页数: 2/8页
文件大小: 387K
代理商: MRF19060SR3
MRF19060 MRF19060R3 MRF19060SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
μ
Adc)
V
(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
6
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
4.7
S
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
VGS
(th)
2
4
V
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
V
GS(Q)
2.5
3.9
4.5
V
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
0.27
V
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
2.7
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
G
ps
11
12.5
dB
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
33
36
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
–31
–28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
–12
dB
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 60 W CW, f = 1990 MHz)
P1dB
60
W
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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