参数资料
型号: MRF20060RS
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: NPN Silicon RF Power Transistor(NPN硅射频功率晶体管)
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: CASE 451A-03, 3 PIN
文件页数: 1/12页
文件大小: 97K
代理商: MRF20060RS
1
MRF20060R MRF20060RS
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron Bipolar Line
The MRF20060R and MRF20060RS are designed for class AB broadband
commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain, excellent linearity and broadband performance of these devices
make them ideal for large–signal, common emitter class AB amplifier applica-
tions. These devices are suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
Designed for FM, TDMA, CDMA and Multi–Carrier Applications
Test Fixtures Available at: http://mot–sps.com/rf/designtds/
Note:
Not suitable for class A operation.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage (IB = 0 mA)
Collector–Emitter Voltage
VCEO
VCES
VCBO
VCER
VEB
IC
PD
25
Vdc
60
Vdc
Collector–Base Voltage
60
Vdc
Collector–Emitter Voltage (RBE = 100 Ohm)
Base–Emitter Voltage
30
Vdc
– 3
Vdc
Collector Current – Continuous
8
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
0.7
Order this document
by MRF20060R/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
CASE 451–06, STYLE 1
(MRF20060R)
CASE 451A–03, STYLE 1
(MRF20060RS)
REV 3
相关PDF资料
PDF描述
MRF20060 RF POWER BROADBAND NPN BIPOLAR
MRF20060S RF POWER BROADBAND NPN BIPOLAR
MRF21010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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