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参数资料
| 型号： | MRF21010 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 360B-05, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 542K |
| 代理商： | MRF21010 |
1
MRF21010LR1 MRF21010LSR1
Motorola, Inc. 2003
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications.
Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,
10 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ″
Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
43.75
0.25
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
5.5
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21010/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2170 MHz, 10 W, 28 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF21010LR1
MRF21010LR1
MRF21010LSR1
CASE 360C-05, STYLE 1
NI-360S
MRF21010LSR1
REV 7
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF21010LR1 | 功能描述:IC MOSFET RF N-CHAN NI-360 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21010LR1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21010LR5 | 功能描述:IC MOSFET RF N-CHAN NI-360 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21010LSR1 | 功能描述:射频MOSFET电源晶体管 10W 28V 2.1 GHZ LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF21010LSR5 | 功能描述:IC MOSFET RF N-CHAN NI-360S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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