参数资料
型号: MRF21010
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 360B-05, 3 PIN
文件页数: 3/8页
文件大小: 542K
代理商: MRF21010
3
MRF21010LR1 MRF21010LSR1
MOTOROLA RF DEVICE DATA
Figure 1. MRF21010L Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1
V
GG
C2
C10
C3
+
DUT
V
DD
Z6
Z7
Z8
PCB
0.453
x 1.118
Microstrip
0.921
x 0.154
Microstrip
0.925
x 0.087
Microstrip
Taconic TLX8-0300, 0.030
,
ε
r
= 2.55
Z2
C8
C7
Z6
Z7
C6
Z4
R2
C4
C1
Z3
Z8
+
C9
+
R1
C5
Z5
Z1
Z2
Z3
Z4
Z5
0.964
x 0.087
Microstrip
0.905
x 0.087
Microstrip
0.433
x 0.512
Microstrip
1.068
x 0.087
Microstrip
0.752
x 0.087
Microstrip
Table 1. MRF21010L Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1 *
(eared)
(earless)
2.2 pF Chip Capacitor, B Case
1.8 pF Chip Capacitor, B Case
0.5 pF Chip Capacitor, B Case
10
μ
F, 35 V Tantalum Chip Capacitors
1 nF Chip Capacitors, B Case
5.6 pF Chip Capacitors, B Case
470
μ
F, 63 V Electrolytic Capacitor
10 pF Chip Capacitor, B Case
Type N Connector Flange Mounts
1.0 k Chip Resistor (0805)
12 Chip Resistor (0805)
100B2R2BW
100B1R8BW
100B0R5BW
293D106X9035D2T
100B102JW
100B5R6BW
ATC
ATC
ATC
Sprague-Vishay
ATC
ATC
C2
C3, C9
C4, C7
C5, C6
C8
C10
N1, N2
R1
R2
* Piece part depending on eared / earless version of the device.
100B100GW
3052-1648-10
ATC
Macom
Figure 2. MRF21010L Test Circuit Component Layout
RF Output
C2
C1
C3
C4 C5
R1
R2
C6 C7
C8
C9
C10
C
VGG
VDD
RF Input
CXM0000101
MRF21010
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相关PDF资料
PDF描述
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21030SR3 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
MRF21030LR3 RF Power Field Effect Transistors
MRF21060S RF MOSFET(射频MOS场效应管)
相关代理商/技术参数
参数描述
MRF21010LR1 功能描述:IC MOSFET RF N-CHAN NI-360 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF21010LR1_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF21010LR5 功能描述:IC MOSFET RF N-CHAN NI-360 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF21010LSR1 功能描述:射频MOSFET电源晶体管 10W 28V 2.1 GHZ LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF21010LSR5 功能描述:IC MOSFET RF N-CHAN NI-360S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR