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| 型号： | MRF21030LR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 710K |
| 描述： | IC MOSFET RF N-CHAN NI-400 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.14GHz |
| 增益： | 13dB |
| 电压 - 测试： | 28V |
| 额定电流： | 1µA |
| 电流 - 测试： | 250mA |
| 功率 - 输出： | 30W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-400 |
| 供应商设备封装： | NI-400 |
| 包装： | 带卷 (TR) |
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RF Device Data
Freescale Semiconductor
MRF21030LR3 MRF21030LSR3
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
=20μA)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 100
μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS
=28Vdc,ID
= 250 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1Adc)
VDS(on)
?
0.29
0.4
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=1Adc)
gfs
?
2
?
S
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package)
(1)
(VDS
=28Vdc,VGS
=0,f=1MHz)
Ciss
?
98.5
?
pF
Output Capacitance
(1)
(VDS
=28Vdc,VGS
=0,f=1MHz)
Coss
?
37
?
pF
Reverse Transfer Capacitance
(VDS
=28Vdc,VGS
=0,f=1MHz)
Crss
?
1.3
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two--Tone Common--Source Amplifier Power Gain
(VDD
=28Vdc,Pout
= 30 W PEP, IDQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
?
13
?
dB
Two--Tone Drain Efficiency
(VDD
=28Vdc,Pout
= 30 W PEP, IDQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
?
33
?
%
3rd Order Intermodulation Distortion
(VDD
=28Vdc,Pout
= 30 W PEP, IDQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
?
-- 3 0
?
dBc
Input Return Loss
(VDD
=28Vdc,Pout
= 30 W PEP, IDQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
?
-- 1 3
?
dB
Two--Tone Common--Source Amplifier Power Gain
(VDD
=28Vdc,Pout
= 30 W PEP, IDQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
12
13
?
dB
Two--Tone Drain Efficiency
(VDD
=28Vdc,Pout
= 30 W PEP, IDQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
31
33
?
%
3rd Order Intermodulation Distortion
(VDD
=28Vdc,Pout
= 30 W PEP, IDQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
?
-- 3 0
--27.5
dBc
Input Return Loss
(VDD
=28Vdc,Pout
= 30 W PEP, IDQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
?
-- 1 3
-- 9
dB
1. Part is internally matched both on input and output.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF21030LSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21030S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21030SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21045 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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