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| 型号： | MRF21045LSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 737K |
| 描述： | IC MOSFET RF N-CHAN NI-400S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 2.16GHz |
| 增益： | 15dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-400S |
| 供应商设备封装： | NI-400S |
| 包装： | 带卷 (TR) |
MRF21045LR3 MRF21045LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
?
Typical 2--carrier W--CDMA Performance for VDD
=28Volts,IDQ
=500mA,
f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels
measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz,
Distortion Products measured over a 3.84 MHz Bandwidth at f1 --10 MHz
and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power ? 10 Watts Avg.
Efficiency ? 23.5%
Gain ? 15 dB
IM3?--37.5dBc
ACPR ? --41 dBc
?
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
?
Internally Matched for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Low Gold Plating Thickness on Leads, 40μ″
Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
105
0.60
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
RθJC
1.65
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF21045
Rev. 12, 10/2008
Freescale Semiconductor
Technical Data
MRF21045LR3
MRF21045LSR3
2110--2170 MHz, 45 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465E--04, STYLE 1
NI--400
MRF21045LR3
CASE 465F--04, STYLE 1
NI--400S
MRF21045LSR3
?
Freescale Semiconductor, Inc., 2008.
All rights reserved.
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| MRF21045LSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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