参数资料
型号: MRF21045LSR3
厂商: Freescale Semiconductor
文件页数: 8/11页
文件大小: 737K
描述: IC MOSFET RF N-CHAN NI-400S
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 250
晶体管类型: LDMOS
频率: 2.16GHz
增益: 15dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 500mA
功率 - 输出: 10W
电压 - 额定: 65V
封装/外壳: NI-400S
供应商设备封装: NI-400S
包装: 带卷 (TR)
6
RF Device Data
Freescale Semiconductor
MRF21045LR3 MRF21045LSR3
TYPICAL CHARACTERISTICS
29
34
42
24
-- 3 2
-- 2 4
η41 --25
IMD
IDQ
= 500 mA
35 --31Pout
= 45 W (PEP)
f1 = 2135 MHz, f2 = 2145 MHz
40 --26
39 --27
38 --28
37 --29
36 --30
28
27
26
25
50
60
12.5
15.5
2
0
60
Gps
η
13 10VDD
=28Vdc
IDQ
= 500 mA
f = 2170 MHz
15 50
14.5 40
14 30
13.5 20
30
10
8
6
4
2190
14
28
2090
-- 4 5
-- 1 0
26 --15IRL
Gps
24 --20η
16 --40ACPR
18 --35IM3
22 --25VDD
=28Vdc,Pout
=10W(Avg.),IDQ
= 500 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
20 --30
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability(CCDF)
2170
2150
2130
2110
46810 5030
60
-- 6 5
-- 2 5
3
5
45
7th Order
η
3rd Order
5th Order
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
-- 6 0
40
35
30
25
20
15
10
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
, DRAIN EFFICIENCY (%),
η
G
ps
, POWER GAIN (dB)
IM3 (dBc), ACPR (dBc)
f, FREQUENCY (MHz)
INPUT RETURN LOSS (dB)
, DRAIN EFFICIENCY (%)
η
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2--Carrier W--CDMA Broadband
Performance
INTERMODULATION D
ISTORTION (dBc)
IMD,
Pout, OUTPUT POWER (WATTS) PEP
, DRAIN EFFICIENCY (%),
η
G
ps
, POWER GAIN (dB)
IM3 (dBc), ACPR (dBc), IRL,
Pout, OUTPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)
η
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
INTERMODULATION D
ISTORTION (dBc)
IMD,
, DRAIN EFFICIENCY (%)
η
50
60
-- 5 0
-- 2 5
4
-- 3 0
-- 3 5
-- 4 0
-- 4 5
30
10
8
6
IDQ
= 300 mA
700 mA
VDD
=28Vdc
f1 = 2135 MHz
f2 = 2145 MHz
600 mA
400 mA
500 mA
INTERMODULATION D
ISTORTION (dBc)
IMD,
20
0
30
0.5
-- 5 5
-- 2 5
Gps
η
ACPR
IM3
Pout, OUTPUT POWER (WATTS Avg.) W--CDMA
-- 3 5
-- 3 0
-- 4 5
-- 4 0
-- 5 0
25
20
15
10
5
10
1
Figure 8. Two--Tone Intermodulation Distortion
and Drain Efficiency versus Drain Supply
VDD
=28Vdc,IDQ
= 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
VDD
=28Vdc,IDQ
= 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability(CCDF)
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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