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参数资料
型号： MRF21030R3
厂商： MOTOROLA INC
元件分类： 功率晶体管
英文描述： RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
中文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装： NI-400, CASE 465E-04, 2 PIN
文件页数： 2/8页
文件大小： 442K
代理商： MRF21030R3
MRF21030R3 MRF21030LR3 MRF21030SR3 MRF21030LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 A)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
—
13
—
dB
Two-Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
—
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
—
-30
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
—
-13
—
dB
Two-Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
12
13
—
dB
Two-Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
31
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
-30
-27.5
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
-13
-9
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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