参数资料
型号: MRF21030R3
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
中文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-400, CASE 465E-04, 2 PIN
文件页数: 3/8页
文件大小: 442K
代理商: MRF21030R3
3
MRF21030R3 MRF21030LR3 MRF21030SR3 MRF21030LSR3
MOTOROLA RF DEVICE DATA
Figure 1. MRF21030 Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1
Z2
VGG
C2
C9
C6
+
L1
DUT
VDD
B1, B2
Short Ferrite Beads
C1
1 pF Chip Capacitor
C2
4.7 pF Chip Capacitor
C3
0.5 pF Chip Capacitor
C4
3.9 pF Chip Capacitor
C5, C12
0.1 F Chip Capacitors
C6, C13
470 F, 63 V Electrolytic Chip Capacitors
C7, C8
0.3 pF Chip Capacitors
C9
3.6 pF Chip Capacitor
C10
22 F Tantalum Chip Capacitor
C11
5.1 pF Chip Capacitor
L1, L2
12.5 nH Inductors
R1, R2
12 Chip Resistors (1206)
Z1
0.153″ x 0.087″ Microstrip
Z2
0.509″ x 0.156″ Microstrip
Z3
0.572″ x 0.087″ Microstrip
Z4
0.509″ x 0.232″ Microstrip
Z5
0.277″ x 0.143″ Microstrip
Z6
0.200″ x 0.305″ Microstrip
Z7
0.200″ x 0.511″ Microstrip
Z8
0.510″ x 0.328″ Microstrip
Z9
0.608″ x 0.081″ Microstrip
PCB
Taconic TLX8, 30 mils, εr = 2.55
Z3
C13
C11
Z8
Z9
Z7
C5
C10
Z5
Z6
L2
B2
R2
C4
C1
Z4
Z10
C3
C8
+
C12
+
Figure 2. MRF21030 Test Circuit Component Layout
C7
B1
R1
+
C1
C2
C3
L1
C4
C8
C7
L2
C9
C11
C10
B2
R2
C12
C13
C5
C6
R1
B1
V
Ground
WB1
WB2
CUT
OUT
AREA
BIAS
SUPPLY
MRF21030
Rev 1
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