参数资料
型号: MRF247
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF POWER TRANSISTOR NPN SILICON
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封装: CASE 316-01, 4 PIN
文件页数: 1/4页
文件大小: 151K
代理商: MRF247
1
MRF247
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 175 MHz.
Specified 12.5 Volt, 175 MHz Characteristics —
Output Power = 75 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
Characterized With Series Equivalent Large–Signal Impedance Parameters
Internal Matching Network Optimized for Minimum Gain Frequency Slope
Response Over the Range 136 to 175 MHz
Load Mismatch Capability at Rated Pout and Supply Voltage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
18
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Peak
20
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
V(BR)CEO
18
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
36
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
V(BR)EBO
4.0
Vdc
Order this document
by MRF247/D
SEMICONDUCTOR TECHNICAL DATA
75 W, 175 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
REV 1
相关PDF资料
PDF描述
MRF2628 RF POWER TRANSISTOR NPN SILICON
MRF275G 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
MRF275 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
MRF282 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
相关代理商/技术参数
参数描述
MRF248 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR
MRF24J40 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:IEEE 802.15.4? 2.4 GHz RF Transceiver
MRF24J40_08 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:IEEE 802.15.4? 2.4 GHz RF Transceiver
MRF24J40_10 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:IEEE 802.15.4a?¢ 2.4 GHz RF Transceiver
MRF24J40-I 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:IEEE 802.15.4⑩ 2.4 GHz RF Transceiver