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参数资料
| 型号： | MRF275 |
| 厂商： | Motorola, Inc. |
| 英文描述： | 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET |
| 中文描述： | 150瓦，28五，500兆赫N.沟道MOS宽带100 - 500 MHz射频功率场效应晶体管 |
| 文件页数： | 1/12页 |
| 文件大小： | 226K |
| 代理商： | MRF275 |
1
MRF275G
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed primarily for wideband large–signal output and driver stages from
100 – 500 MHz.
Guaranteed Performance @ 500 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 10 dB (Min)
Efficiency — 50% (Min)
100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
Overall Lower Capacitance @ 28 V
Ciss — 135 pF
Coss — 140 pF
Crss — 17 pF
Simplified AVC, ALC and Modulation
Typical data for power amplifiers in industrial and
commercial applications:
Typical Performance @ 400 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 12.5 dB
Efficiency — 60%
Typical Performance @ 225 MHz, 28 Vdc
Output Power — 200 Watts
Power Gain — 15 dB
Efficiency — 65%
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M
)
Gate–Source Voltage
65
Vdc
VGS
ID
PD
±
40
Adc
Drain Current — Continuous
26
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
400
2.27
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
0.44
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF275G/D
SEMICONDUCTOR TECHNICAL DATA
150 W, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
100 – 500 MHz
RF POWER FET
CASE 375–04, STYLE 2
D
G
S
(FLANGE)
D
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF275G | 功能描述:射频MOSFET电源晶体管 5-500MHz 150Watts 28Volt 10dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF275L | 功能描述:射频MOSFET电源晶体管 5-500MHz 100Watts 28Volt Gain 8.8dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF281 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF281SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF281SR1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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