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参数资料
| 型号： | MRF275 |
| 厂商： | Motorola, Inc. |
| 英文描述： | 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET |
| 中文描述： | 150瓦，28五，500兆赫N.沟道MOS宽带100 - 500 MHz射频功率场效应晶体管 |
| 文件页数： | 2/12页 |
| 文件大小： | 226K |
| 代理商： | MRF275 |
MRF275G
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
ON CHARACTERISTICS
(1)
V(BR)DSS
65
—
—
Vdc
IDSS
—
—
1
mA
IGSS
—
—
1
μ
A
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 5 A)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
DYNAMIC CHARACTERISTICS
(1)
VGS(th)
VDS(on)
gfs
1.5
2.5
4.5
Vdc
0.5
0.9
1.5
Vdc
3
3.75
—
mhos
Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
(2) (Figure 1)
Ciss
Coss
Crss
—
135
—
pF
—
140
—
pF
—
17
—
pF
Common Source Power Gain
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)
Drain Efficiency
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)
Electrical Ruggedness
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA,
VSWR 30:1 at all Phase Angles)
Gps
10
11.2
—
dB
η
50
55
—
%
ψ
No Degradation in Output Power
(1.) Each side of device measured separately.
(2.) Measured in push–pull configuration.
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