参数资料
型号: MRF282S
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件页数: 6/11页
文件大小: 142K
代理商: MRF282S
MRF282S MRF282Z
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
G
Figure 4. Output Power & Power Gain
versus Input Power
Pin, INPUT POWER (WATTS)
2
0
0.0
0.5
6
14
10
Figure 5. Output Power versus Frequency
4
1800
1850
f, FREQUENCY (MHz)
14
10
0.25
0.75
1.0
P
2000
P
16
14
12
10
G
1900
1950
Figure 6. Intermodulation Distortion
versus Output Power
– 10
Pout, OUTPUT POWER (WATTS) PEP
– 70
Figure 7. Power Gain and Intermodulation
Distortion versus Supply Voltage
12
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
10
10
I
Figure 8. Intermodulation Distortion
versus Output Power
0.1
Pout, OUTPUT POWER (WATTS) PEP
– 60
10
– 20
Figure 9. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
9
1.0
13
10
1.0
0.1
0.1
10
11
12
11
8
20
22
16
– 40
– 30
– 10
I
–40
28
–35
I
24
26
14
13
–30
–25
–20
–15
– 60
– 50
– 40
– 30
6
12
8
Pout = 10 W (PEP)
IDQ = 75 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
Gps
IMD
3rd Order
7th Order
5th Order
Pin = 0.2 W
0.8 W
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
50 mA
IDQ = 125 mA
100 mA
75 mA
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
13
11
0.5 W
4
12
8
– 20
18
VDD = 26 Vdc
IDQ = 75 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 50
VDD = 26 Vdc
IDQ = 75 mA
f = 2000 MHz Single Tone
Pout
Gps
9
25 mA
50 mA
100 mA
IDQ = 125 mA
75 mA
25 mA
VDD = 26 Vdc
IDQ = 75 mA
Single Tone
相关PDF资料
PDF描述
MRF282Z LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF284 RF Power Field-Effect Transistors
MRF284S RF Power Field-Effect Transistors
MRF313 HIGH-FREQUENCY TRANSISTOR NPN SILICON
MRF314 RF POWER TRANSISTORS NPN SILICON
相关代理商/技术参数
参数描述
MRF282SR1 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF282Z 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282ZR1 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF284 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF284C 制造商:Motorola Inc 功能描述:284C