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参数资料
| 型号： | MRF313 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | HIGH-FREQUENCY TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 63K |
| 代理商： | MRF313 |
1
MRF313
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for wideband amplifier, driver or oscillator applications in military,
mobile, and aircraft radio.
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 1.0 Watt
Power Gain = 15 dB Min
Efficiency = 45% Typ
Emitter Ballast and Low Current Density for Improved MTBF
Common Emitter for Improved Stability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
3.0
Vdc
Collector Current — Continuous
150
mAdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
6.1
35
Watts
mW/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
28.5
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current (VCE = 20 Vdc, IB = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICEO
30
—
—
Vdc
35
—
—
Vdc
35
—
—
Vdc
3.0
—
—
Vdc
—
—
1.0
mAdc
(continued)
Order this document
by MRF313/D
SEMICONDUCTOR TECHNICAL DATA
1.0 W, 400 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 305A–01, STYLE 1
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|---|---|
| MRF314 | 功能描述:射频双极电源晶体管 30-200MHz 30Watts 28Volt Gain 10dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
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| MRF315 | 制造商:Ferraz Shawmut 功能描述: |
| MRF315A | 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF316 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 35V 9A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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