- 您现在的位置：买卖IC网 > PDF目录378675 > MRF313 (MOTOROLA INC) HIGH-FREQUENCY TRANSISTOR NPN SILICON PDF资料下载
参数资料
| 型号： | MRF313 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | HIGH-FREQUENCY TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 63K |
| 代理商： | MRF313 |
MRF313
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Unit
Max
Typ
Min
Symbol
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
hFE
20
60
150
—
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 20 Vdc, f = 200 MHz)
fT
—
2.5
—
GHz
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
3.5
5.0
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (1)
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
Gpe
15
16
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
η
—
45
—
%
Series Equivalent Input Impedance
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
Zin
—
6.4 – j4.8
—
Ohms
Series Equivalent Output Impedance
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
Zout
—
75 – j45
—
Ohms
NOTE:
1. Class C
Figure 1. 400 MHz Power Gain Test Circuit
RF
INPUT
+28 V
–
C8
C6
C5
C4
C3
C2
L1
Z2
C9
C1
L4
+
L2
L3
DUT
R
+
Z3
Z1
C7
RF
OUTPUT
C1, C2, C4 — 1.0–20 pF JOHANSON 9063
C3 — 1.0–10 pF JOHANSON
C5 — 150 pF Chip
C6 — 0.1
μ
F
C7, C8 — 680 pF Feedthru
C9 — 1.0
μ
F TANTALUM
L1, L3 — 5 Turns, AWG #20, 1/4
″
I.D.
L2 — Ferrite Bead, FERROXCUBE
L2 —
No. 56–590–65/4B
L4 — FERROXCUBE VK200–20/4B
L4 —
Input/Output Connectors — Type N
Board — Glass Teflon,
ε
= 2.56, t = 0.062
″
R — 4.7 Ohms, 1/4 W
Z1 — 2.0
″
x 0.1
″
MICROSTRIP LINE
Z2, Z3 — 2.6
″
x 0.1
″
MICROSTRIP LINE
相关PDF资料 |
PDF描述 |
|---|---|
| MRF314 | RF POWER TRANSISTORS NPN SILICON |
| MRF392 | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON |
| MRF393 | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON |
| MRF426 | RF POWER TRANSISTOR NPN SILICON |
| MRF429 | RF POWER TRANSISTOR NPN SILICON |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF314 | 功能描述:射频双极电源晶体管 30-200MHz 30Watts 28Volt Gain 10dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF314A | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF315 | 制造商:Ferraz Shawmut 功能描述: |
| MRF315A | 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF316 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 35V 9A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
发布紧急采购，3分钟左右您将得到回复。