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参数资料
| 型号： | MRF284S |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power Field-Effect Transistors |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 2/12页 |
| 文件大小： | 134K |
| 代理商： | MRF284S |
MRF284 MRF284S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150
μ
Adc)
VGS(th)
2.0
3.0
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 200 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.3
0.6
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.0 Adc)
gfs
1.0
1.5
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
43
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
23
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
1.4
—
pF
FUNCTIONAL TESTS
(in Motorola Test Fixture)
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
9
10.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
35
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
–32
–29
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
9
15
—
dB
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
9
10.4
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
—
35
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
–34
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
9
15
—
dB
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
Gps
8.5
9.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
η
35
45
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
at All Phase Angles)
Ψ
No Degradation In Output Power
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