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参数资料
| 型号： | MRF3094 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | MICROWAVE LINEAR POWER TRANSISTORS |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 65K |
| 代理商： | MRF3094 |
MRF3094 MRF3095
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
MRF3094, MRF3095
V(BR)CES
50
—
—
Vdc
Emitter Base Breakdown Voltage
(IE = 0.25 mA)
MRF3094, MRF3095
V(BR)EBO
3.5
—
—
Vdc
Collector Base Breakdown Voltage
(IC = 1.0 mA)
MRF3094, MRF3095
V(BR)CBO
45
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
MRF3094, MRF3095
V(BR)CEO
22
—
—
Vdc
Collector Cutoff Current
(VCB = 28 V)
MRF3094, MRF3095
ICBO
—
—
0.25
mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 V, IC = 100 mA)
MRF3094, MRF3095
hfe
20
35
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, f = 1.0 MHz)
MRF3094, MRF3095
Cob
—
—
3.5
pF
Functional Tests
(VCE = 20 V, IC = 120 mA, Po = 0.5 W, f = 1.6 GHz)
(VCE = 20 V, IC = 120 mA, Po = 0.8 W, f = 1.6 GHz)
MRF3094
MRF3095
GPE
10.5
9.0
11.5
10
—
—
dB
Output Load Mismatch
(VCE = 20 V, IC = 120 mA, Po = 0.5 W,
f = 1.6 GHz, Load VSWR =
∞
:1)
(VCE = 20 V, IC = 120 mA, Po = 0.8 W,
f = 1.6 GHz, Load VSWR =
∞
:1)
MRF3094
MRF3095
ψ
No degradation in output power
Gain Linearity
(VCE = 20 V, IC = 120 mA, f = 1.6 GHz,
Po1 = 0.5 W, Po2 = 0.5 mW)
(VCE = 20 V, IC = 120 mA, f = 1.6 GHz,
Po1 = 0.8 W, Po2 = 0.8 mW)
MRF3094
MRF3095
LG
—
—
—
—
–0.2 to +1.0
–0.2 to +1.0
dB
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PDF描述 |
|---|---|
| MRF3095 | MICROWAVE LINEAR POWER TRANSISTORS |
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| MRF372 | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF3095 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE LINEAR POWER TRANSISTORS |
| MRF3104 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:The RF Line: Microwave Linear Power Transistors 0.5-1.6W, 1.55-1.65GHz, 20V |
| MRF3105 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:The RF Line: Microwave Linear Power Transistors 0.5-1.6W, 1.55-1.65GHz, 20V |
| MRF3106 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:The RF Line: Microwave Linear Power Transistors 0.5-1.6W, 1.55-1.65GHz, 20V |
| MRF313 | 功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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