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参数资料
| 型号： | MRF327 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 316-01, 4 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 193K |
| 代理商： | MRF327 |
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to 400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
Built–In Matching Network for Broadband Operation Using Double Match
Technique
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
Characterized for 100 to 500 MHz
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
33
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
9.0
12
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25
°C
PD
250
1.43
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.7
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
V(BR)CEO
33
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
V(BR)CES
60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IC = 0)
V(BR)CBO
60
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc)
hFE
20
—
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
95
125
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
MRF327
80 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
Order this document
by MRF327/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF329 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF331 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF Line |
| MRF338 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF340 | 制造商:Motorola Inc 功能描述: |
| MRF340_07 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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