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| 型号： | MRF377HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/14页 |
| 文件大小： | 1271K |
| 描述： | MOSFET N-CH 32V 240W RF PWR |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 860MHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 17A |
| 电流 - 测试： | 2A |
| 功率 - 输出： | 45W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-860C3 |
| 供应商设备封装： | NI-860C3 |
| 包装： | 带卷 (TR) |
| 其它名称： | Q2202731 Q3031314 |
MRF377HR3
1
RF Device Data
Freescale Semiconductor
RF Power Field--Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large--signal, common source amplifier
applications in 32 volt digital television transmitter equipment.
?
Typical Broadband DVBT OFDM Performance @ 470--860 MHz, 32 Volts,
IDQ
= 2000 mA, 8K Mode, 64 QAM
Output Power ? 45 Watts Avg.
Power Gain
≥
16.7 dB
Drain Efficiency
≥
21%
ACPR
≤
--58 dBc
?
Typical Broadband ATSC 8VSB Performance @ 470--860 MHz, 32 Volts,
IDQ
= 2000 mA
Output Power ? 80 Watts Avg.
Power Gain
≥
16.5 dB
Drain Efficiency
≥
27.5%
IMD
≥
--31.3 dBc
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Device Designed for Push--Pull Operation Only
?
Integrated ESD Protection
?
Excellent Thermal Stability
?
Lower Thermal Resistance Package
?
Low Gold Plating Thickness on Leads, 40μ″
Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
-- 0.5, +65
Vdc
Gate--Source Voltage
VGS
-- 0.5, +15
Vdc
Drain Current -- Continuous
ID
17
Adc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
648
3.7
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation @ TC
=25°C
Derate above 25°C
CW
235
1.38
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
RθJC
0.27
0.29
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF377H
Rev. 2, 3/2009
Freescale Semiconductor
Technical Data
470 -- 860 MHz, 45 W AVG., 32 V
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375G--04, STYLE 1
NI--860C3
MRF377HR3
?
Freescale Semiconductor, Inc., 2006, 2009.
All rights reserved.
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| MRF3866G | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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