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参数资料
| 型号： | MRF406 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.380 INCH, FM-4 |
| 文件页数： | 1/1页 |
| 文件大小： | 15K |
| 代理商： | MRF406 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CES
I
C
= 50 mA
BV
CBO
I
C
= 50 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 1.0 mA
I
CES
V
CE
= 12.5 V
h
FE
I
C
= 1.0 A
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40
40
20
4.0
UNITS
V
V
V
V
mA
---
5.0
V
CE
= 5.0 V
10
35
C
ob
V
CB
= 12.5 V
f = 1.0 MHz
200
pF
P
out
G
PE
η
IMD
ψ
V
CE
= 12.5 V
f = 30 MHz
20
12
45
-30
W
(PEP)
dB
%
dB
V
CC
= 12.5 V I
C
≤
1.75 A P
out
= 20 W
(PEP)
I
cq
= 25 mA
f = 30, 30.001 MHz
V
CC
= 12.5 V I
C
≤
1.75 A P
out
= 20 W
(PEP)
I
cq
= 25 mA
f = 30, 30.001 MHz
>
30:1
ALL PHASE ANGLES
NPN SILICON RF POWER TRANSISTOR
MRF406
DESCRIPTION:
The
MRF406
is Designed for
12.5 V 30 MHz Power Amplifier
Applications.
FEATURES INCLUDE:
Common Emitter
Output Power = 20 W
(PEP)
MAXIMUM RATINGS
I
C
4.0 A
V
CE
20 V
V
CB
40 V
P
DISS
80 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
2.2
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE .380" 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
C
B
E
E
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