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参数资料
| 型号： | MRF559G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, M238, MACRO-X-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 134K |
| 代理商： | MRF559G |
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MRF559
MRF559G
Rev A 9/2005
* G Denotes RoHS Complaint, Pb Free Terminal Finish
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
16
Vdc
VCBO
Collector-Base Voltage
30
Vdc
VEBO
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
150
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75C
Derate above 75C
2.0
20
Watts
mW/ C
Tstg
Storage Temperature Range
-65 to +150
C
Macro X
Features
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = .5 W
Minimum Gain = 8.0 dB
Efficiency 50%
Cost Effective Macro X Package
Electroless Tin Plated Leads for Improved Solderability
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF559GT | 制造商:Microsemi Corporation 功能描述:MRF559GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF559LF | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF559T | 制造商:Microsemi Corporation 功能描述:MRF559T - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF571 | 制造商:Advanced Semiconductor Inc 功能描述:L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5711LT1 | 制造商:Freescale Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-143 |
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