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参数资料
| 型号： | MRF572 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SILICON NPN RF TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERMIC PACKAGE-4 |
| 文件页数： | 1/1页 |
| 文件大小： | 14K |
| 代理商： | MRF572 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 1.0 mA
BV
CBO
I
C
= 100
μ
A
I
CBO
V
CB
= 8.0 V
BV
EBO
I
E
= 50
μ
A
h
FE
V
CE
= 8.0 V I
C
= 10 mA
C
cb
V
CB
= 8.0 V
f
t
V
CE
= 8.0 V I
C
= 25 mA
V
CE
= 8.0 V I
C
= 25 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
12
UNITS
V
V
μ
A
V
20
200
1.5
30
300
---
pF
GHz
f = 1.0 MHz
0.25
f = 1.0 GHz
8.0
|
S21E
|
2
f = 1.0 GHz
f = 2.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
16.9
12.0
16.5
12
dB
GNF
V
CE
= 8.0 V I
C
= 0 mA
10
dB
NF
V
CE
= 8.0 V I
C
= 0 mA
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
1.0
1.5
2.5
2.0
dB
SILICON NPN RF TRANSISTOR
MRF572
DESCRIPTION:
The
MRF572
is Designed for Low
Noise General Purpose VHF,UHF
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I
C
60 mA
V
CE
12 V
P
DISS
500 mW @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
T
J
T
STG
PACKAGE STYLE 100MIL CERAMIC STRIPLINE
1 = Collector 2 & 4 = Emitter
3 = Base
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