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参数资料
| 型号： | MRF629 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | TO-205AD, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 157K |
| 代理商： | MRF629 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CES
I
C
= 50 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
20
UNITS
V
V
V
mA
---
1.0
200
C
OB
V
CB
= 12.5 V f = 1.0 MHz
15
pF
P
G
η
C
V
CC
= 12.5 V P
OUT
= 2.0 W f = 470 MHz
8.0
50
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF629
DESCRIPTION:
The
ASI MRF629
is Designed for
UHF large signal, FM Land Mobile
Applications up to 470 MHz.
FEATURES:
Grounded Emitter
P
G
= 8.0 dB at 2.0 W/470 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
400 mA
V
CEO
16 V
V
CES
36 V
V
EBO
4.0 V
P
DISS
5.0 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
35 °C/W
PACKAGE STYLE TO 205AD
MILLIMETER
S
MIN
9.02
8.01
4.20
0.44
0.44
0.41
5.08 BSC
0.72
0.74
12.70 19.05 0.500 0.750
6.35
--
45° BSC
--
1.27
2.54
--
1 = COLLECTOR
2 = BASE
3 = EMITTER
INCHES
MIN
DIM
A
B
C
D
E
F
G
H
J
K
L
M
P
R
MAX
9.29 0.355 0.366
8.50 0.315 0.335
4.57 0.165 0.180
0.53 0.017 0.021
0.88 0.017 0.035
0.48 0.016 0.019
0.200 BSC
0.86 0.028 0.034
0.01 0.029 0.040
MAX
0.25
45 °BSC
--
0.10
--
0.050
--
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