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参数资料
| 型号： | MRF581AG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, M238, MACRO-X-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | MRF581AG |
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MRF581
MRF581G
MRF581A
MRF581AG
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
MRF581
MRF581A
Unit
VCEO
Collector-Emitter Voltage
18
15
Vdc
VCBO
Collector-Base Voltage
30
Vdc
VEBO
Emitter-Base Voltage
2.5
Vdc
IC
Collector Current
200
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 50C
Derate above 50C
2.5
25
Watts
mW/ C
P
D
Total Device Dissipation @ TC = 25C
Derate above 25C
1.25
10
Watts
mW/ C
Tstg
Storage Junction Temperature Range
-65 to +150
C
TJmax
Maximum Junction Temperature
150
C
Revision A- December 2008
Macro X
Features
Low Noise - 2.5 dB @ 500 MHZ
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
*G Denotes RoHS Compliant, Pb free Terminal Finish
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF581AGT | 制造商:Microsemi Corporation 功能描述:MRF581AGT - Bulk |
| MRF581G | 功能描述:TRANS NPN 18V 200MA MACRO X RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| MRF581GT | 制造商:Microsemi Corporation 功能描述:MRF581GT - Bulk |
| MRF581LF | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF581T | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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