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参数资料
| 型号： | MRF5P21180 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-1230, CASE 375D-04, 4 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 406K |
| 代理商： | MRF5P21180 |
MRF5P21180
2
MOTOROLA RF DEVICE DATA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 180 W CW
Case Temperature 80
°
C, 38 W CW
R
θ
JC
0.40
0.40
°
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μ
Adc)
V
GS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 800 mAdc)
V
GS(Q)
—
3.6
—
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
5
—
S
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
G
ps
12.5
14
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
η
23
25.5
—
%
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz
and f2 +10 MHz referenced to carrier channel power.)
IM3
—
–37.5
–35
dBc
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz
and f2 +5 MHz.)
ACPR
—
–41
–38
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
IRL
—
–14
–9
dB
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push–pull configuration.
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相关代理商/技术参数 |
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|---|---|
| MRF5P21180HR5 | 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5P21180HR6 | 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5P21180HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180R6 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21240 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
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