参数资料
型号: MRF5P21240
厂商: Motorola, Inc.
英文描述: RF POWER FIELD EFFECT TRANSISTOR
中文描述: 射频功率场效应晶体管
文件页数: 3/8页
文件大小: 782K
代理商: MRF5P21240
3
MRF5P21240R6
MOTOROLA RF DEVICE DATA
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z24
PCB
1.270
x 0.058
Microstrip
0.250
x 0.500
Microstrip
0.850
x 0.150
Microstrip
0.535
x 0.390
Microstrip
0.218
x 0.080
Microstrip
0.825
x 0.080
Microstrip
Arlon GX–0300–55–22, 0.030
,
ε
r
= 2.55
Figure 1. MRF5P21240R6 Test Circuit Schematic
Z1
Z2, Z23
Z3, Z22
Z4, Z21
Z5, Z6
Z7, Z8
Z9, Z10
0.898
x 0.080
Microstrip
0.775
x 0.136
Microstrip
0.060
x 0.080
Microstrip
1.867
x 0.080
Microstrip
0.443
x 0.080
Microstrip
0.100
x 0.080
Microstrip
0.490
x 0.540
Microstrip
Table 1. MRF5P21240R6 Test Circuit Component Designations and Values
Description
Short Ferrite Beads
18 pF Chip Capacitors
6.8 pF Chip Capacitors
0.1
μ
F Chip Capacitors
1000 pF Chip Capacitors
4.7
μ
F Tantalum Capacitors
10
μ
F Electrolytic Capacitors
C19, C20, C21, C22
C23, C24, C25, C26
C27, C28
100
μ
F Electrolytic Capacitors
R1, R2
1.0 k , 1/8 W Chip Resistors
R3, R4
10 , 1/8 W Chip Resistors
Part
Value, P/N or DWG
2743019447
100B180JCA500X
100B6R8JCA500X
CDR33BX104AKWS
100B102JCA500X
T491C475M050
EEV–HB1H100P
T491X226K035AS4394
Manufacturer
Fair Rite
ATC
ATC
Kemet
ATC
Kemet
Panasonic
Kemet
B1, B2
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10, C11, C12
C13, C14
C15, C16
C17, C18
22
μ
F Tantalum Capacitors
517D107M050BB6A
Sprague
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相关PDF资料
PDF描述
MRF5P21240R6 RF POWER FIELD EFFECT TRANSISTOR
MRF5S19100HD The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HR3 The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HSR3 The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19150 RF Power Field Effect Transistors
相关代理商/技术参数
参数描述
MRF5P21240HR5 功能描述:MOSFET RF N-CHAN 28V 52W NI-1230 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5P21240HR6 功能描述:MOSFET RF N-CHAN 28V 52W NI-1230 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5P21240R6 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF5S18060N 制造商:FREESCALE-SEMI 功能描述:
MRF5S18060NBR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray