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参数资料
| 型号： | MRF5S19090HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 461K |
| 描述： | MOSFET RF N-CHAN 28V 18W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 850mA |
| 功率 - 输出： | 18W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(TC
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, VGS
= 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, VGS
= 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS
= 5 Vdc, VDS
= 0 Vdc)
IGSS
—
—
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS
= 10 Vdc, ID
= 200
μAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, ID
= 850 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain--Source On--Voltage
(VGS
= 10 Vdc, ID
= 2 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS
= 10 Vdc, ID
= 2 Adc)
gfs
—
5
—
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, VGS
= 0 Vdc)
Crss
—
1.7
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
= 28 Vdc, IDQ
= 850 mA, Pout
= 18 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz,2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth
@
±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps
13.5
14.5
—
dB
Drain Efficiency
ηD
24
25.8
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
Adjacent Channel Power Ratio
ACPR
—
--51
--48
dBc
Input Return Loss
IRL
—
--14.5
--9
dB
1. Part is internally matched both on input and output.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19090LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19090LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19100HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19100HR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF5S19100HR3 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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