参数资料
型号: MRF5S19090HSR5
厂商: Freescale Semiconductor
文件页数: 9/12页
文件大小: 461K
描述: MOSFET RF N-CHAN 28V 18W NI-780S
标准包装: 50
晶体管类型: LDMOS
频率: 1.93GHz
增益: 14.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 850mA
功率 - 输出: 18W
电压 - 额定: 65V
封装/外壳: NI-780S
供应商设备封装: NI-780S
包装: 带卷 (TR)
A
R
C
H
I
V
E
I
N
F
O
R
M
A
T
I
O
N
A
R
C
H
I
V
E
I
N
F
O
R
M
A
T
I
O
N
6
RF Device Data
Freescale Semiconductor
MRF5S19090HR3 MRF5S19090HSR3
TYPICAL CHARACTERISTICS
ηD
--40
0
40
1
--65
--25
IM3
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2--Carrier N--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
IM3 (dBc), ACPR (dBc)
VDD
= 28 Vdc, IDQ
= 850 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N--CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IM3
ηD
35
--30
30
--35
25
20
--45
15
--50
10
--55
5
--60
10
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2
for MTBF in a particular application.
108
107
106
120 140 160 180 200
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
MTTF FACTOR (HOURS X AMPS
2
)
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 10. 2--Carrier CCDF N--CDMA
10
1
0.1
0.01
0.001
2 4 6 8
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @
±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
f, FREQUENCY (MHz)
--100
0
Figure 11. 2--Carrier N--CDMA Spectrum
--10
--20
--30
--40
--50
--60
--70
--80
--90
--ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
--IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5 4.53
0
--1.5
--3
--4.5
--6
--7.5
7.5
(dB)
N--CDMA TEST SIGNAL
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