参数资料
型号: MRF5S19090LSR3
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-780S, CASE 465A-06, 2 PIN
文件页数: 7/12页
文件大小: 420K
代理商: MRF5S19090LSR3
A
A
F
Freescale Semiconductor, Inc.
MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
7
For More Information On This Product,
Go to: www.freescale.com
V
DD
= 28 V, I
DQ
= 850 mA, P
out
= 18 W Avg.
Figure 11. Series Equivalent Input and Output Impedance
f = 1930 MHz
f = 1990 MHz
Z
o
= 10
f = 1930 MHz
f = 1990 MHz
f
MHz
Z
source
Z
load
1930
1960
1990
2.98 - j5.12
4.06 - j4.64
3.36 - j4.65
2.07 - j1.31
2.02 - j1.18
1.93 - j1.01
Z
load
*
Z
source
Z
source
=
Test circuit impedance as measured from
gate to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相关PDF资料
PDF描述
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130SR3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150 RF POWER FIELD EFFECT TRANSISTORS
相关代理商/技术参数
参数描述
MRF5S19100HD 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HR 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF5S19100HR3 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19100HR5 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19100HSR3 功能描述:射频MOSFET电源晶体管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray