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| 型号： | MRF5S19100HR3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 3/12页 |
| 文件大小： | 726K |
| 代理商： | MRF5S19100HR3 |
3
MRF5S19100HR3 MRF5S19100HSR3
MOTOROLA RF DEVICE DATA
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.590
″
x 0.071
″
Microstrip
0.450
″
x 1.133
″
Microstrip
0.450
″
x 0.141
″
Microstrip
0.490
″
x 0.080
″
Microstrip
0.085
″
x 0.080
″
Microstrip
1.124
″
x 0.080
″
Microstrip
Arlon GX-0300-55-22, 0.030
″
,
ε
r
= 2.55
Figure 1. MRF5S19100HR3(HSR3) Test Circuit Schematic
Z1, Z3
Z2
Z4
Z5
Z6
Z7
Z8
0.140
″
x 0.080
″
Microstrip
0.450
″
x 0.080
″
Microstrip
0.525
″
x 0.080
″
Microstrip
0.636
″
x 0.141
″
Microstrip
0.650
″
x 0.050
″
Microstrip
0.320
″
x 1.299
″
Microstrip
0.091
″
x 1.133
″
Microstrip
C3
R2
V
BIAS
V
SUPPLY
C13
C9
C8
C15
C6
C7
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z9
Z11
Z12
Z13
+
DUT
C12
C11
R4
W1
C2
Z10
Z8
B1
R3
+
C4
C5
C16
Z7
+
+
C14
+
Z14
C17
C10
+
Table 1. MRF5S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
ATC
Kemet
Kemet
Newark
ATC
ATC
Newark
Newark
Garrett Electronics
B1
C1
C2
C3
C4, C12
C5, C11
C6
C7
C8
C9, C10, C13, C14
C15
C16
C17*
R1
R2
R3, R4
W1
* Need for part will vary from fixture to fixture.
Short RF Bead
22 pF Chip Capacitor, B Case
10 pF Chip Capacitor, B Case
1
μ
F, 50 V Tantalum Capacitor
0.1
μ
F Chip Capacitors, B Case
1K pF Chip Capacitors, B Case
2.7 pF Chip Capacitor, B Case
4.3 pF Chip Capacitor, B Case
10
μ
F, 35 V Tantalum Capacitor
22
μ
F, 35 V Tantalum Capacitors
0.6 – 4.5 Gigatrim Variable Capacitor
2.2 pF Chip Capacitor, B Case
0.3 pF Chip Capacitor, B Case
1 k Chip Resistor
560 k Chip Resistor
12 Chip Resistors
1 turn 14 gauge wire
95F786
100B220CP 500X
100B100CP 500X
T494C105(1)050AS
CDR33BX104AKWS
100B102JP 500X
100B2R7BP 500X
100B4R3JP 500X
T494D106(1)035AS
T494X226(1)035AS
44F3358
100B2R2BP 500X
100B0R3BP 500X
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19100HR5 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19100HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19100HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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