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参数资料
| 型号： | MRF5S19100HSR3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 726K |
| 代理商： | MRF5S19100HSR3 |
5
MRF5S19100HR3 MRF5S19100HSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
5
1860
15
55
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
Gp
I
35
15
20
25
30
I
I
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 1000 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
13
30
11
20
9
35
7
45
1880 1900
1920
1940
1960 1980 2000
2020 2040
10
100
10
16
1
1300 mA
I
DQ
= 1500 mA
1000 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
Gp
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
760 mA
530 mA
10
15
14
13
11
100
55
15
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
I
I
1000 mA
1300 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
760 mA
I
DQ
= 1500 mA
10
20
25
30
35
40
45
50
10
55
25
0.1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
I
I
30
35
40
45
50
1
5th Order
3rd Order
44
46
58
32
P3dB = 51.98 dBm (157.81 W)
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Po
V
DD
= 28 Vdc, I
DQ
= 1000 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
Center Frequency = 1960 MHz
42
P1dB = 51.3 dBm (135.01 W)
Ideal
Actual
57
56
55
54
53
52
51
49
48
47
33
34
35
36
37
38
39
40
41
50
43
40
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1000 mA
TwoTone Measurements, Center Frequency = 1960 MHz
530 mA
12
35
25
50
40
30
14
12
10
8
6
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
η
D
η
D
,
E
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19100HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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