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参数资料
| 型号： | MRF842 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 64K SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 100K |
| 代理商： | MRF842 |
1
MRF842
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 12.5 volt UHF large–signal, common–base amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
806–960 MHz.
Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 20 Watts
Power Gain = 6.0 dB Min
Efficiency = 50% Min
Series Equivalent Large–Signal Characterization
Internally Matched Input for Broadband Operation
100% Tested for Load Mismatch Stress at All Phase Angles with 20:1
VSWR @ 15.5 Volt Supply and 50% RF Overdrive
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
7.6
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
80
0.64
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case (2)
R
θ
JC
1.5
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
NOTES:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Symbol
Min
Typ
Max
Unit
V(BR)CEO
16
—
—
Vdc
V(BR)CES
36
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
ICBO
—
—
5.0
mAdc
(continued)
Order this document
by MRF842/D
SEMICONDUCTOR TECHNICAL DATA
20 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
REV 6
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