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参数资料
| 型号： | MRF857 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 64K SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 103K |
| 代理商： | MRF857 |
1
MRF857S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800–960 MHz.
Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = +43 dBm
Typical Noise Figure = 5.25 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800–960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 0.4 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD
30
Vdc
Collector–Base Voltage
55
Vdc
Emitter–Base Voltage
4
Vdc
Total Device Dissipation @ TC = 50
°
C
Derate above 50
°
C
17
0.114
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
°
C
Storage Temperature Range
–65 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance (TJ = 150
°
C, TC = 50
°
C)
ELECTRICAL CHARACTERISTICS
R
θ
JC
8.4
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
Collector Cutoff Current (VCB = 24 V, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
28
35
—
Vdc
55
85
—
Vdc
55
85
—
Vdc
4
5
—
Vdc
—
—
1
mA
(continued)
Order this document
by MRF857/D
SEMICONDUCTOR TECHNICAL DATA
CLASS A
800–960 MHz
2.1 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 305D–01, STYLE 1
REV 3
相关PDF资料 |
PDF描述 |
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| MRF858 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| MRF858S | 64K SERIAL CONFIGURATION PROM |
| MRF859 | 64K SERIAL CONFIGURATION PROM |
| MRF859S | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF857D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF857S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF858 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF858S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF859 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
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