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参数资料
| 型号： | MRF842 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 64K SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 100K |
| 代理商： | MRF842 |
MRF842
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
10
—
—
—
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob
—
45
65
pF
Common–Base Amplifier Power Gain
(Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz)
Collector Efficiency
(Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz)
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin (3) = 6.0 W, f = 870 MHz,
VSWR = 20:1, all phase angles)
GPB
6.0
7.0
—
dB
η
50
55
—
%
—
No Degradation in Output Power
NOTE:
3. Pin = 150% of the typical input power requirement for 20 W output power @ 12.5 Vdc.
Figure 1. 870 MHz Test Circuit Schematic
B — Ferrite Bead, Ferroxcube 56–590–65–3B
C1, C11 — 51 pF, 100 Mil Chip Capacitor
C2, C13 — 15
μ
F, 20 WV Tantalum
C3, C12 — 1000 pF Unelco J101
C4, C10 — 91 pF Mini–Underwood
C5 — 15 pF Mini–Underwood
C6 — 12 pF Mini–Underwood
C7, C8 — 21 pF Mini–Underwood
C9 — 11 pF Mini–Underwood
L1, L4 — 11 Turns #20 AWG Over 10 ohm 1/2 W Carbon
L2, L3 — 4 Turns #20 AWG, 200 Mil ID
TL1, TL4 — Micro Strip, Zo = 50
TL2 — Micro Strip, Zo = 38
,
λ
/4 @ 838 MHz
TL3 — Micro Strip, Zo = 24
,
λ
/4 @ 838 MHz
Board — 0.032
″
Glass Teflon
Board —
2 oz. Cu CLAD,
ε
r = 2.55
C1
TL2
TL1
TL3
C11
C2
L4
C3
L1
L2
C12
C13
B
B
TL4
C9
C6
L3
C4
C10
+12.5 Vdc
VRE
PORT
C5
C7
C8
D.U.T.
+
+
SOCKET
SOCKET
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