- 您现在的位置：买卖IC网 > Datasheet目录92 > MRF5S19150HSR5 (Freescale Semiconductor)MOSFET RF N-CHAN 28V 32W NI-880S Datasheet资料下载
参数资料
| 型号： | MRF5S19150HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 433K |
| 描述： | MOSFET RF N-CHAN 28V 32W NI-880S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 32W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
10
Rev. 4, 10/2008
RF Device Data
Freescale Semiconductor
MRF5S19150HR3
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. ?Typical? parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including ?Typicals?, must be validated for each customer application by
customer?s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescale
and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
?
Freescale Semiconductor, Inc. 2008. All rights reserved.
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1-800-521-6274 or +1-480-768-2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or +1-303-675-2140
Fax: +1-303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF5S19150H
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S21045MR1 | MOSFET RF N-CH 28V 10W TO270-4 |
| MRF5S21045NR1 | MOSFET RF N-CH 28V 10W TO270-4 |
| MRF5S21090HSR5 | MOSFET RF N-CHAN 28V 19W NI-780S |
| MRF5S21100HSR5 | MOSFET RF N-CHAN 28V 23W NI-780S |
| MRF5S21130HSR5 | MOSFET RF N-CHAN 28V 28W NI-880S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19150R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19150SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21045 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21045MBR1 | 功能描述:MOSFET RF N-CH 28V 10W TO272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO270-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
发布紧急采购，3分钟左右您将得到回复。