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| 型号： | MRF5S21130HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 398K |
| 描述： | MOSFET RF N-CHAN 28V 28W NI-880S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.2A |
| 功率 - 输出： | 28W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
MRF5S21130HR3 MRF5S21130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA
and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
?
Typical 2-Carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
= 1200 mA,
Pout
=
28 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 13.5 dB
Efficiency ? 26%
IM3 @ 10 MHz Offset ? -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ? -39 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
Lower Thermal Resistance Package
?
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
372
2.13
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation @ TC
= 25
°C
Derate above 25°C
CW
100
0.54
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 76°C, 28 W CW
RθJC
0.44
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF5S21130H
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
MRF5S21130HR3
MRF5S21130HSR3
2110-2170 MHz, 28 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF5S21130HSR3
CASE 465B-03, STYLE 1
NI-880
MRF5S21130HR3
?
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21130R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21150 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF5S21150HR3 | 功能描述:MOSFET RF N-CHAN 28V 33W NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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