参数资料
型号: MRF5S21130HSR5
厂商: Freescale Semiconductor
文件页数: 6/12页
文件大小: 398K
描述: MOSFET RF N-CHAN 28V 28W NI-880S
标准包装: 50
晶体管类型: LDMOS
频率: 2.11GHz
增益: 13.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.2A
功率 - 输出: 28W
电压 - 额定: 65V
封装/外壳: NI-880S
供应商设备封装: NI-880S
包装: 带卷 (TR)
MRF5S21130HR3 MRF5S21130HSR3
3
RF Device Data
Freescale Semiconductor
R1
VBIAS
Z7
RF
INPUT
Z1 Z2 Z3
Z9
+
C15
+
C20
C11
+
C13
VSUPPLY
RF
OUTPUT
DUT
+
C1
C3
R2
C9
C5
C10
C6
Z6
Z10
C8
C7
Z4
Z5
Z11 Z16Z12
Z13
Z14
Z15
Z8
C17
C18
C19
+
C16
C12
+
C14
+
C2
C4
Figure 1. MRF5S21130HR3(SR3) Test Circuit Schematic
Z9, Z10 0.709″
x 0.083
Microstrip
Z11 0.415″
x 1.000
Microstrip
Z12 0.531″
x 0.083
Microstrip
Z13 0.994″
x 0.083
Microstrip
Z14, Z15 0.070″
x 0.220
Microstrip
Z16 0.430″
x 0.083
Microstrip
PCB Taconic TLX8, 0.030″, εr
= 2.55
Z1 0.500″
x 0.083
Microstrip
Z2 0.995″
x 0.083
Microstrip
Z3 0.905″
x 0.083
Microstrip
Z4 0.159″
x 1.024
Microstrip
Z5 0.117″
x 1.024
Microstrip
Z6, Z7 0.749″
x 0.083
Microstrip
Z8 0.117″
x 1.000
Microstrip
Table 5. MRF5S21130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C13, C14, C15, C16
10 μF, 35 V Tantalum Capacitors
293D1106X9035D
Vishay-Sprague
C3, C4, C11, C12
220 nF Chip Capacitors (1812)
1812Y224KXA
Vishay-Vitramon
C5, C6, C7, C9, C10, C18, C19
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C8
0.1 pF 100B Chip Capacitor
100B0R1BW
ATC
C17
0.5 pF 100B Chip Capacitor
100B0R5BW
ATC
C20
220 μF, 63 V Electrolytic Capacitor, Radial
13668221
Philips
R1, R2
1 k, 1/4 W Chip Resistors
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MRF5S21130S 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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MRF5S21150HR3 功能描述:MOSFET RF N-CHAN 28V 33W NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR