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| 型号： | MRF5S9070MR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 569K |
| 描述： | MOSFET RF N-CH 26V 70W TO-270-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 17.8dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 600mA |
| 功率 - 输出： | 14W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270-2 |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
AR
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HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRF5S9070MR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device make it ideal for large-signal, common-source amplifier applica-
tions in 26 volt base station equipment.
?
Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD
= 26 Volts,
IDQ
= 600 mA, P
out
= 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13)
Power Gain ? 17.8 dB
Drain Efficiency ? 30%
ACPR @ 750 kHz Offset ? -47 dBc @ 30 kHz Bandwidth
?
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW
Output Power
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Integrated ESD Protection
?
200°C Capable Plastic Package
?
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +68
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
219
1.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 70 W CW
Case Temperature 78°C,
14 W CW
RθJC
0.80
0.93
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF5S9070MR1
Rev. 5, 5/2006
Freescale Semiconductor
Technical Data
880 MHz, 70 W, 26 V
SINGLE N-CDMA
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF5S9070MR1
?
Freescale Semiconductor, Inc., 2006. All rights reserved.
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| MRF5S9070NR1 | 功能描述:射频MOSFET电源晶体管 70W RF POWER FET TO270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9070NR5 | 功能描述:射频MOSFET电源晶体管 70W RF POWER FET TO270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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| MRF5S9080NR1 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 80W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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