参数资料
型号: MRF5S21045NR1
厂商: Freescale Semiconductor
文件页数: 13/16页
文件大小: 945K
描述: MOSFET RF N-CH 28V 10W TO270-4
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 500
晶体管类型: LDMOS
频率: 2.11GHz
增益: 14.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 500mA
功率 - 输出: 10W
电压 - 额定: 68V
封装/外壳: TO-270AB
供应商设备封装: TO-270 WB-4
包装: 带卷 (TR)
6
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
-- 6 0
-- 2 5
0.1
7th Order
TWO--TONE SPACING (MHz)
VDD
=28Vdc,Pout
= 45 W (PEP), IDQ
= 500 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
IMD, INTERMODULATIO
N DISTORTION (dBc)
Figure 8. Pulse CW Output Power versus
Input Power
40
54
P3dB = 48.17 dBm (65.6 W)
Pin, INPUT POWER (dBm)
VDD
=28Vdc,IDQ
= 500 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
52
46
42
30 3432 36
Actual
Ideal
P1dB = 47.60 dBm (57.5 W)
50
44
48
38
28
P
out
, OUTPUT POWER (dBm)
IM3 (dBc), ACPR (dBc)
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
Pout, OUTPUT POWER (WATTS) AVG.
40
-- 1 0
-- 2 0
30
-- 3 0ACPR
-- 4 0
10
-- 5 0
1 10 100
20
TC
=--30_C
Gps
VDD=28Vdc,IDQ
= 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W--CDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
100
11
17
0.1
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
=28Vdc
IDQ
= 500 mA
f = 2140 MHz
12
10
1
16
15
14
13
50
40
30
20
10
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
VDD
=12V
16 V
05010
20
30 40
60
70
80
6
16
10
8
12
14
IDQ
= 500 mA
f = 2140 MHz
25_C
IM3
ηD
-- 3 0_C
85_C
85_C
25_C-- 3 0_C
85_C
25_C
-- 3 0_C
25_C
85_C
TC
=--30_C
-- 3 0_C
25_C
85_C
25_C
20 V
24 V
28 V
32 V
85_C
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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