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参数资料
型号： MRF5S9101NR1
厂商： MOTOROLA INC
元件分类： 功率晶体管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封装： PLASTIC, CASE 1486-03, 4 PIN
文件页数： 1/16页
文件大小： 451K
代理商： MRF5S9101NR1
1
MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =
100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =
50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)
Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 2.3% rms
Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,
@ f = 960 MHz
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200°C Capable Plastic Package
TO-270 WB-4 in Tape and Reel. R1 Suffix - 500 Units per 32 mm, 13 inch
Reel.
TO-272 WB-4 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch
Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
68
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
427
2.44
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 50 W CW
RθJC
0.41
0.47
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
Order this document
by MRF5S9101/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
869-960 MHz, 100 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF5S9101NR1
MRF5S9101NBR1
MRF5S9101MR1
MRF5S9101MBR1
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S9101NR1(MR1)
CASE 1484-02, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S9101NBR1(MBR1)
Motorola, Inc. 2004
REV 0
相关PDF资料
PDF描述
MRF5S9101NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9101MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S9101MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9101NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9150HR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
MRF5S9150HR3 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HR3_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5S9150HR5 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HSR3 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HSR5 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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