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参数资料
| 型号： | MRF5S9150HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/12页 |
| 文件大小： | 480K |
| 描述： | MOSFET RF N-CHAN 28V 33W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 19.7dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.5A |
| 功率 - 输出： | 33W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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MRF5S9150HR3 MRF5S9150HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
?23
?3
?8
?13
?28
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
920
840
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout
= 33 Watts Avg.
890
880
870
860
850
?65
32
28
24
?40
?50
?55
η
D
, DRAIN
EFFICIENCY (%)
ηD
?60
?45
26
30
20
19.6
18.8
18
17.2
16
16.8
17.6
18.4
19.2
ALT1
16.4
VDD= 28 Vdc, Pout
= 33 W (Avg.)
IDQ
= 1500 mA, N?CDMA IS?95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
900 910
?18
?23
?8
?13
?18
?28
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
920
840
IRL
Gps
16
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout
= 66 Watts Avg.
890
880
870
860
850
?60
43
39
35
?35
?45
?50
η
D
, DRAIN
EFFICIENCY (%)
ηD
?55
?40
37
41
19.5
19
18
17
14.5
15.5
16.5
17.5
18.5
ALT1
15
VDD= 28 Vdc, Pout
= 66 W (Avg.)
IDQ
= 1500 mA, N?CDMA IS?95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
900 910
?3
Figure 5. Two-Tone Power Gain versus
Output Power
10 400100
16
22
1
IDQ
= 2250 mA
1875 mA
Pout, OUTPUT POWER (WATTS) PEP
20
18
G
ps
, POWER GAIN (dB)
750 mA
VDD
= 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements
21
19
17
1500 mA
1125 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10 400100
?70
?10
1
IDQ
= 750 mA
1875 mA
Pout, OUTPUT POWER (WATTS) PEP
?30
?50
VDD
= 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements
?20
?40
?60
1500 mA
2250 mA
1125 mA
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
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