- 您现在的位置：买卖IC网 > Datasheet目录92 > MRF6P23190HR6 (Freescale Semiconductor)MOSFET RF N-CHAN 28V 40W NI-1230 Datasheet资料下载
参数资料
| 型号： | MRF6P23190HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 431K |
| 描述： | MOSFET RF N-CHAN 28V 40W NI-1230 |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS |
| 频率： | 2.39GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.9A |
| 功率 - 输出： | 40W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF6P23190HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
?
Typical 2-Carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
= 1900 mA,
Pout
= 40 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 14 dB
Drain Efficiency ? 23.5%
IM3 @ 10 MHz Offset ? -37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ? -41 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
CW Operation @ TC
= 25
°C
Derate above 25°C
CW
250
1.3
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
RθJC
0.22
0.24
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6P23190H
Rev. 3, 12/2008
Freescale Semiconductor
Technical Data
MRF6P23190HR6
2300-2400 MHz, 40 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
?
Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6P24190HR5 | MOSFET RF N-CH 28V 190W NI-1230 |
| MRF6P27160HR6 | MOSFET RF N-CHAN 28V 35W NI-1230 |
| MRF6P3300HR5 | MOSFET RF N-CH 32V 300W NI-860C3 |
| MRF6P9220HR5 | MOSFET RF N-CH 28V 47W NI-860C3 |
| MRF6S18060NBR1 | MOSFET RF N-CH 26V 60W TO272-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P24190HR5 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
发布紧急采购，3分钟左右您将得到回复。