参数资料
型号: MRF6P23190HR6
厂商: Freescale Semiconductor
文件页数: 10/11页
文件大小: 431K
描述: MOSFET RF N-CHAN 28V 40W NI-1230
产品变化通告: RF Devices Discontinuation 28/Jun/2011
标准包装: 150
晶体管类型: LDMOS
频率: 2.39GHz
增益: 14dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.9A
功率 - 输出: 40W
电压 - 额定: 68V
封装/外壳: NI-1230
供应商设备封装: NI-1230
包装: 带卷 (TR)
8
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
Zo
= 50
Ω
Zload
Zsource
Figure 15. Series Equivalent Source and Load Impedance
f = 2300 MHz
f = 2400 MHz
f
MHz
Zsource
Ω
Zload
Ω
2300 9.31 - j12.12 7.89 - j32.78
Zsource
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
VDD
= 28 Vdc, I
DQ
= 1900 mA, P
out
= 40 W Avg.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
?
?+
+
2310 9.27 - j11.93 7.61 - j32.19
2320 9.24 - j11.75 7.35 - j31.62
2330 9.21 - j11.57 7.10 - j31.06
2340 9.18 - j11.40 6.86 - j30.53
2350 9.16 - j11.23 6.64 - j30.01
2360 9.14 - j11.06 6.43 - j29.51
2370 9.13 - j10.90 6.23 - j29.02
2380 9.12 - j10.75 6.04 - j28.55
2390 9.11 - j10.59 5.86 - j28.09
2400 9.11 - j10.45 5.68 - j27.64
f = 2300 MHz
f = 2400 MHz
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MRF6P24190HR6_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P27160H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET