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| 型号： | MRF6S18060NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/21页 |
| 文件大小： | 763K |
| 描述： | MOSFET RF N-CH 26V 60W TO272-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 1.81GHz ~ 1.88GHz |
| 增益： | 15dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 450mA |
| 功率 - 输出： | 25W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 带卷 (TR) |
MRF6S18060NR1 MRF6S18060NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
?
Typical GSM Performance: VDD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 Watts
CW, f = 1990 MHz
Power Gain ? 15 dB
Drain Efficiency - 50%
GSM EDGE Application
?
Typical GSM EDGE Performance: VDD
= 26 Volts, I
DQ
= 450 mA,
Pout
= 25 Watts Avg., Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain ? 15.5 dB
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -76 dBc
EVM ? 2% rms
?
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
225°C Capable Plastic Package
?
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
?
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 77°C, 25 W CW
RθJC
0.81
0.95
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S18060N
Rev. 4, 12/2008
Freescale Semiconductor
Technical Data
MRF6S18060NR1
MRF6S18060NBR1
1800-2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S18060NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S18060NBR1
?
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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